Abstract
We report a two-stack indirect-barrier (IB) GaAs/AlGaAs quantum well infrared photodetector (QWIP) for mid-wavelength infrared (MWIR) and a voltage-tunable InGaAs/GaAs/AlGaAs triple-coupled (TC) QWIP for long-wavelength infrared (LWIR) detection. The peak responsivity of the stacked QWIP at zero bias (PV mode) was found to be 30 mA/W at λp=4.3μm and T=40 K. The maximum peak responsivity for the stacked QWIP was found to be 0.21 A/W at λp=4.3 μm, Vb=4 V, and T=40 K. For the LWIR TC-QWIP, the peak detection wavelength due to (E1→E3) transition shifts from 10 to 9.4 μm as bias voltage increases from 7 to 12 V. The maximum responsivity was found to be 0.085 A/W at λp=9.4 μm, Vb=12 V, and T=40 K. The results show that simultaneously detection of both the MWIR and LWIR bands can be achieved at Vb⩾7 V or Vb⩽−5 V. It is shown that this two-stack QWIP can be used as a voltage-tunable two-color or multicolor QWIP for the MWIR and LWIR dual band detection.
Published Version
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