Abstract
A new two-dimensional integrated process simulation system named SPIRIT-I (Simulation Processor for Integrated Representation of Impurity-profile and Topography-I) has been developed. This system includes elementary process simulators of deposition, lithography, etching, ion implantation, diffusion, and oxidation. SPIRIT features a closely coupled simulation between a topography simulator and impurity-profile simulators at each processing step. As an example of simulation, an LDD (Lightly-Doped Drain) MOSFET with tilted source and drain implantation has been derived. In addition, this process simulation system is closely connected with a 3D device simulator. Using this coupled simulation system, the critical effect of processing conditions on device characteristics is analyzed.
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