A two-dimensional integrated device/circuit numerical model for GaAs DCFL gate simulation

Abstract

A two-dimensional integrated numerical device/circuit model for GaAs/MESFET DCFL gate simulation is presented. It is different from previous publications in that (a) transient carrier transport equations of the FETs are calculated with consideration for the interaction between interconnected FETs in a circuit, (b) the numerical calculations are carried out for the coupled equations to provide accuracy and (c) with the new algorithm used, the numerical calculation can be carried out with high efficiency. A “dynamic method” and a “single gate method” have been developed to simulate the steady state transfer and ring oscillator transient characteristics, respectively, which have proved to be much more efficient than the previously used methods. Based on the model, a gate level two-dimensional numerical simulator, LADES2G, has been developed and successfully applied to GaAs DCFL circuit design.