A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

Abstract

We show that a triphenylene derivative, 2,3,6,7,10,11-hexapentyl-oxytriphenylene, acts as an electron beam resist of 10-nm resolution with high dry-etch durability. The triphenylene derivative exhibited positive and negative behaviors depending on the dose and developers. When pentanol was used as a developer, positive behavior was observed for electron doses between ∼ 3 × 10 −4 and ∼ 1 × 10 −3 C/cm 2 at 20 keV, and at higher doses, the resist exhibited negative behavior. When monochlorobenzene was used as a developer, only the negative behavior was observed with a sensitivity of 2× 10 −3 C/cm 2 at 20 keV. Performance of the resists were demonstrated defining 10-nm dots and lines (negative tone), and fabricating a high aspect-ratio Si nanostructure with a single layer process.