Abstract
In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT. The transient component of the model is based on the availability of a newly developed expression for the excess carrier concentration in the base. The transient voltage and current are obtained both numerically and analytically from this model. The theoretical predictions of both approaches are compared with experimental data and found to be in good agreement.
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