Abstract
A three-valley Monte Carlo simulation approach is used in order to probe the transient electron transport that occurs within bulk wurtzite zinc oxide. For the purposes of this analysis, we follow O’Leary et al. [Solid State Commun. 150, 2182 (2010)], and study how electrons, initially in thermal equilibrium, respond to the sudden application of a constant applied electric field. We find that for applied electric field strength selections in excess of 300 kV/cm that an overshoot in the electron drift velocity is observed. An undershoot in the electron drift velocity is also observed for applied electric field strength selections in excess of 700 kV/cm, this velocity undershoot not being observed for other compound semiconductors, such as gallium arsenide and gallium nitride. We employ a means of rendering transparent the electron drift velocity enhancement offered by the transient electron transport, and then use the calculated dependence of the peak transient electron drift velocity on the applied electric field for the design optimization of short-channel high-frequency electron devices.
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