Abstract
We study the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide using an ensemble semi-classical three-valley Monte Carlo simulation approach. We find that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. We also present evidence to suggest that the negative differential mobility exhibited by the velocity-field characteristic associated with bulk wurtzite zinc oxide is not related to transitions to the upper valleys. The transient electron transport that occurs within bulk wurtzite zinc oxide is studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. From these transient electron transport results, we conclude that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.
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