Abstract
Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport within bulk wurtzite zinc oxide, and its response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient. We find that while the electron transport associated with zinc oxide is highly sensitive to the crystal temperature and to the non-parabolicity coefficient, it is not very sensitive to the doping concentration. These results suggest that zinc oxide is a competitive material for many of the electron device applications envisioned for its gallium nitride counterpart.
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