Abstract
A three-valley Monte Carlo simulation approach is used for a detailed comparative analysis of the transient electron transport that occurs within bulk zinc blende gallium arsenide and bulk wurtzite gallium nitride. We find that in both cases that the electron drift velocity and the average electron energy field-dependent “settling times” are strongly correlated, and that the electric field resulting in the shortest electron transit-time is a function of the channel length. The calculated dependence of the peak transient electron drift velocity on the applied electric field can be used for the design optimization of short-channel high-frequency devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
