A three-dimensional atomic scale simulations of CVD-SiC film growth in {1 1 1}, {1 1 0} and {1 0 0} family of planes

Abstract

A systematic study was conducted on the atomic scale growth process of the SiC film prepared with the Chemical Vapor Deposition (CVD) method. By using the kinetic Monte Carlo method, and coupled with the kinetics of chemical reaction, deposition, diffusion and desorption of the atoms on the surface of substrate, a 3-dimensional atomic scale model with three {1 1 1}, {1 1 0} and {1 0 0} diversely oriented CVD-SiC films was constructed. The effect of substrate temperature on growth of the three families of plane was analyzed. The results show that the surface morphology of the three families of plane in the SiC film follows a similar growth rule, and goes through three stages: the formation of islets, the merging and expanding of islets, and the subsequent dynamic balance between islets. At different substrate temperatures, the growth rate, surface roughness, film thickness, and relative density of the three families of plane have different tendencies that vary with an increase in deposition time. It is expected that the simulation results play a guiding role in the experiment for preparing the CVD-SiC films.