Abstract
Activationless electron-hole generation and recombination in type II semimetallic single and double quantum wells is studied. An 8 x 8 k . p matrix Hamiltonian, and the transfer matrix method, is used to calculate the recombination rates for quantum wells made from InAs and GaSb. This model includes the non-parabolicity and anisotropy of the energy band structure. Because the conduction band of InAs lies beneath the valence band of GaSb, the generation and recombination processes do not require extra excitation particles such as phonons or photons. The effect of externally applied electric and magnetic fields is also included in the calculation of the recombination rates and both n-type and p-type single and double quantum wells are considered.
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