Abstract
CdTe, a large band gap semiconductor, is used for a variety of applications such as infrared detectors, solar cells, and other opto-electronic devices. These applications require that CdTe thin films or buffer layers are made with high structural perfection. To date, a variety of substrates have been employed in CdTe thin film production, including GaAs, sapphire, and InSb. InSb is particularly attractive due to the small lattice mismatch with CdTe across {100}. We will report results of a combined TEM/low temperature photoluminescence (LT-PL) investigation into the defect structures present in MBE grown (001) CdTe films produced on InSb substrates, and initial observations of MOCVD CdTe on CdTe substrates.Several high quality MBE CdTe/InSb specimens were initially selected based upon initial PL measurements and DCRC (double crystal rocking curve) results.
Published Version
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