A SYSTEMATIC STUDY ON THE DIELECTRIC RELAXATION, ELECTRIC MODULUS AND ELECTRICAL CONDUCTIVITY OF Al/Cu:TiO2∕n-Si (MOS) STRUCTURES/CAPACITORS

Abstract

The various levels (5%, 10% and 15%) of Cu-doped TiO2 thin films were grown on the [Formula: see text]-type silicon (Si) wafer by spin coating technique to obtain Al/(Cu:TiO[Formula: see text]/[Formula: see text]-Si (MOS) capacitors. Both the real and imaginary components of complex dielectric ([Formula: see text], complex electric modulus ([Formula: see text], loss tangent (tan [Formula: see text] and alternating electrical conductivity ([Formula: see text] of the obtained Al/(Cu:TiO[Formula: see text]-Si (MOS) capacitors were studied by taking into account the effects of Cu-doping levels into TiO2 viaimpedance spectroscopy method (ISM) in the wide range voltage ([Formula: see text][Formula: see text]V) and frequency (10[Formula: see text]kHz–1[Formula: see text]MHz). All the obtained dielectric parameters were obtained as strongly dependent on frequency, voltage and Cu doping level. The observed anomalous peak in the forward bias region both in the real and imaginary components of [Formula: see text], tan [Formula: see text], complex electric modulus ([Formula: see text] and [Formula: see text] were attributed to the Cu:TiO2 interlay er, series resistance ([Formula: see text], surface states ([Formula: see text], interfacial/surface and dipole polarizations. The higher values of [Formula: see text] at low and intermediate frequencies implied that [Formula: see text] have enough time to follow external ac signal, and also dipoles respond to the applied field to reorient themselves. Consequently, the fabricated Al/(Cu:TiO[Formula: see text]-Si can be successfully used as MOS capacitor or MOS-field-effect transistor (MOSFET) in the industrial applications in near future.