Abstract
AbstractThis letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures an instantaneous transition to the memristor state. Store and restore can be achieved within 66.1ps and 2.97 ps in case of VDD is 1 V for the worst case. In addition, the 8T2R structure performs well at lower supply voltages as 243.3 mV for STORE and 411.8 mV for RESTORE. When a 10%‐dimensional error of the devices and 10% memristance mismatch are taken into account, the 8T2R still shows high stability.
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