Abstract
A switching phenomenon has been reported in certain lateral geometry transistors in silicon integrated circuits. These devices switch between conducting and nonconducting states at a critical value of V CE . A hypothesis for the mechanism has been proposed. In this paper an equivalent circuit is developed for the switching lateral transistor and is used to predict transistor behavior. The effect of manufacturing tolerances on the device switching voltage is investigated and a technique of production control is proposed. Circuits using the device are described in which the circuit switching voltage may be varied over a wide range. Some applications of the switching lateral transistor, as an overvoltage protection circuit and a relaxation oscillator, are described.
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