Abstract
The presented work encircles the survey on different types of Nitrogen and Hydrogen gas sensor with the modified field-effect transistors (FETs) structures. By modifying the structure, through addition of different kind of particles (palladium, platinum, tungsten) or tubes (carbon nanotubes) , the unique sensing device designs are achieved. The structural overview of CNT-based FETs (CNTFETs), Pd-FET, Dual FET, and Tungsten gate FET for Nitrogen and Hydrogen gas detection, their sensing mechanisms, sensitivity are mainly the emphasis of this review work. The COSFET (Chalcogenide-oxide-siliconFET), CNTFET, WO3MOS2 (Tungsten trioxide- Molybdenum disulfide) , are reviewed as nitrogen gas sensor having sensitivity of 100,1.2,45 respectively with-respect-to time and PNINGAA-FET(n+ source pocket doped PIN gate all around tunnel FET), Pd-MOSFET(Palladium-based Trench Gate MOSFET) and Dual-FET used as a hydrogen gas sensor having sensitivity of 10<sup>5</sup>, 10 and 100 with-respect-to pressure in Torr.
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