Abstract
We carried out experiments and computational simulations in order to answer a yet unanswered question about a surface flattening mechanism of a [11¯03¯]-oriented GaN film consisting of faceted non-flat top twins. Our results revealed that an overgrowth of one variant of twins over the other, which was manifested only at a thickness larger than a few microns due to a slight asymmetric crystallographic tilt (1.0° ± 0.4°) of twins, played a key role in a surface flattening mechanism. In addition, we experimentally demonstrated that GaN grown on a SiO2-patterned m-plane sapphire substrate had no asymmetric tilt and that no surface flattening occurred.
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