Abstract
Current gain is an important design parameter of bipolar transistors. While a SiGe base is commonly used to increase the current gain, the recently reported surface accumulation layer transistor (SALTran) concept has been shown to give a similar current gain enhancement. Using two-dimensional numerical simulation studies, we show for the first time that a combination of the SiGe base and the SALTran concept can be used to realize super beta bipolar transistors with peak current gains more than 12000.
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