A subthreshold surface potential model to study the effect of dual material gate in gate all around n-TFETs

Abstract

In this paper, an analytical Pseudo 2D model of surface potential for dual material surrounding gate tunneling field effect transistor (TFET) is presented. The major drawback of the TFET is low ON- current and its poor immunity against the Drain induced barrier lowering effects. These drawbacks can be alleviated by using dual material gate without disturbing other performance parameters. This paper present a simple pseudo 2 dimensional analysis of the surface potential, to study the effect of dual material gate on the I d -V g characteristics, potential energy, electric field and surface potential of a GAA n-TFET.