Abstract

This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG) Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material (DM) gate with two different work function is proposed. A concise comparison between DM HSG TFET, SM HSG TFET and conventional Silicon Surrounding Gate (SG) TFET is illustrated based on electrical parameters such as transconductance, electric field, surface potential, electron mobility and drain current. The juxtaposition of DM HSG TFET and SM HSG TFET with Silicon SG TFET counterparts reveals that the DM HSG TFET address better. The simulation analysis is carried out on the numerical Technology Computer Aided Design (TCAD) simulation tool.

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