Abstract
The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC growth rate is two to three times faster than that of conventional Ni-MILC, without any degradation of TFTs. These results were explained by a stress that is generated by the formation of Pd2Si
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