Abstract
In this study, we used scanning rapid thermal annealing (RTA) and a new structure of thin film transistor (TFT), which was inserted a light absorption layer into, in order to increase the growth rate of metal-induced lateral crystallization (MILC). Amorphous silicon film was radiated by a halogen lamp and transformed into poly crystalline silicon by MILC. We investigated the light absorption layer effect on MILC growth and TFT performance. TFT using scanning RTA and the light absorption layer has better electrical properties than the conventional one. By this method, we could reduce crystallization time and obtain good electrical properties. Also, during the fabrication process of TFT, glass substrates were not bent or wrapped.
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