Abstract
Metal Induced Lateral Crystallization (MILC) was carried out for amorphous Si (a-Si) with different thickness. The effect of a-Si thickness on MILC process was studied. We found that longer MILC region was obtained when a thinner a-Si layer was used. Thin-film transistors (TFT) were fabricated on the MILC poly-Si with different thickness. It was found that the TFTs on the thin MILC poly-Si layer have better performance than those on the thick MILC poly-Si layer. The results show that a thin (1000 /spl Aring/) a-Si layer should be used for MILC TFT fabrication, in order to obtain better TFT performances.
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