Abstract
A novel metal-induced lateral crystallization (MILC) technique has been applied to the formation of polycrystalline silicon (poly-Si) with greatly enhanced material characteristics. Compared to conventional poly-Si, MILC poly-Si gives rise to much improved performance not only in sensors but also in thin film transistors. A variety of sensing and electronic devices can be realized simultaneously on MILC poly-Si, thus making MILC an enabling technology for integrated silicon micro-machining.
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