Abstract
We investigated the silicide formation in the Ni/epi-Si1-xCx systems. Ni films were deposited on epi-Si1-xCx/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni/epi-Si1-xCx systems was maintained at low values compared to Ni/Si systems. The stability of the silicide layer in Ni/epi-Si1-xCx system is explained by the presence of the small amount of C in the Ni-silicide layer or at the grain boundaries.
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