Abstract
We investigated the silicide formation in Ni/epi-Si 1− x C x systems. Ni–Pt and Ni–Pt–Ta films were deposited on epi-Si 1− x C x /Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si 1− x C x systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni–silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si 1− x C x system is explained by not only the Pt rich layer on the top of the Ni–silicide layer, but also by the presence of a small amount of Pt in the Ni–silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni–Pt films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
