A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

Abstract

ABSTRACTThe effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon‐wire and normal wire are used for the transition of CPW–CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three‐dimensional HFSS electromagnetic simulation has been also carried out. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1378–1381, 2014