Abstract
In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (Vset). The difference in Vset and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of Vset in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on Vset. It reveals that the oxygen vacancy (VO) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
