Abstract
The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 /h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The of the / As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x
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