Abstract
This paper focuses on a detailed study of workfunction variation to modulate the barrier height in fully depleted silicon on insulator (FD-SOI) technology including pocket doping. The work is further extended to evaluate the zero temperature coefficient (ZTC) point by varying the temperature for a wide range of 250K to 420K. The complete task is segregated into two parts according to the barrier height (ϕB): (i) gate workfunction (ϕM) is considered to be similar as that of semiconductor workfunction (ϕS) (i.e., ϕB = ϕM − ϕS ≈ 0) (ii) ϕM is much higher than the ϕS (ϕB > 0). And, further the latter subsection is subdivided into DC and AC analysis for a better representation. The pocket design also checked by considering single sided as well as double sided to get more insightful advantages of the pocket design on FD-SOI technology by investigating wide range of electrical parameters in a comparative manner. From the analysis, it has been noted that the device having higher ϕB is outperformed in mitigating the leakage current. Hence, the work is further extended on the design with higher ϕB to evaluate the ZTC by observing the DC and AC parameters at different temperature ranges. All the device configurations are designed and analyzed through commercially available device simulator ATLAS.
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