Abstract
A new symmetric two-terminal non-volatile electrical pulse induced resistance-change (EPIR) device is fabricated in the Pr0.7Ca0.3MnO3 (PCMO) materials system and analysed. Two actual devices of somewhat different construction are tested. Both consist of two similar half-parts, characterized by similar resistance versus pulse voltage hysteresis loops, which are reversely connected together in series forming a reflection symmetric device. Even though the devices are as physically symmetric as possible, they are found to exhibit resistance-switching under the application of voltage pulses of different amplitude and of different polarities. A symmetric model of the above device is proposed, and its analysis confirms the features noted above. The switching is history dependent and shows multi-intrinsic state resistance switching, which is very useful for developing future multi-bit EPIR devices.
Highlights
A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, Pr1-xCaxMnO3 (PCMO), is proposed and analyzed
Initial studies on fabricated devices [1] recognized the possibility of non-symmetry in the device structure since in general the top and bottom electrodes were of different sizes and different materials
This asymmetry due to electrode/electrode-region variability has been recently incorporated as a requirement for reversible switching in the experimental work of Aoyama, et al, [10] and in the theoretical studies of Rosenberg et al, [8] who generated different top and bottom metallic non-percolating domains as the basis for the effect
Summary
A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. We describe in this letter a device resistance switching model carefully constructed to be symmetric with two identical half-parts. The two parts are structurally identical, but have the same resistance switching characteristics as given by a hysteresis curve of resistance verses voltage.
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