Abstract
Electric pulse induced resistance change has been studied in the CuxO binary oxide systems for application to resistive random access memory. Binary transition metal oxides have typically shown unipolar switching, however, this has led to resistance states that have been somewhat erratic. We address here bipolar resistance switching (regular and reversed polarity) in thin film CuxO samples. I-V measurements at different temperatures showed strong evidence for a metallic bulk filament formation under application of an initial forming electric pulse. After forming, Set and Reset states can be controlled by changing positive and negative pulse amplitudes, but show two distinct resistance change regions: (i) resistance states from 20 Ω to 40 Ω with reversed polarity; and (ii) resistance states from 150 Ω to 8,000 Ω with regular polarity. A highly stable reversed polarity bipolar switching regime under application of low amplitude pulses and pulse width of 200 nsec is achieved, and a model for the switching mechanisms based on Cu+ ion motion in the interface region between the metallic filament and the top electrode is developed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
