Abstract
ABSTRACT We have carried out microscopic resistance profile measurements by scanning probe microscopy (SPM) and model analyses on a symmetric thin-film electrical pulse induced resistance change (EPIR) device having a Pr0.7Ca0.3MnO3(PCMO) active layer. The film morphology and surface potential distribution has been examined by atomic force microscopy (AFM) and surface scanning Kelvin probe microscopy (SKPM). Resistance distribution profiles across the device indicate contribution to the resistance switching from three parts of the device: the two PCMO interface regions within ∼1–3 μ m around the metal electrode/PCMO contacts, and the bulk PCMO material. Such an EPIR device showed a symmetric resistance switching behavior under electric pulsing at room temperature. This research indicates that the EPIR device may be used as a nonvolatile resistive random access memory (RRAM) device with different operation modes by controlling electric pulse voltage. The result is also important for understanding the resistance switching behavior in the EPIR device.
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