Abstract
We have investigated the influence of the growthconditions on the intensity of blue emission at roomtemperature from As-doped GaN samples grown by molecularbeam epitaxy. A series of As-doped GaN samples was grown at800 °C with constant fluxes of As and gallium, butwith different amounts of active nitrogen. Varying the N fluxallowed us to investigate films grown from strongly Ga-richconditions to more N-rich conditions. The blue emissionincreases monotonically with the nitrogen flux and is mostintense in the layers grown under the most nitrogen-richconditions. This fact suggests that As atoms incorporatedinto the Ga sub-lattice are responsible for the strong blueemission in As-doped GaN.
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