Abstract
In a recent study [1] we deduced the damage profiles in Cu and Al crystals due to self implantation from the measured dechanneling cross section. On the basis of this work a model for the observed shallow and deep damage was proposed. In the present work this model is tested by comparing the damage in Cu crystals due to 100 keV self implantation at RT and due to 100 keV implantation with Ag ions at RT. In both cases regions of shallow and deep damage were found. The range of the shallow damage coincides approximately with the projected range of the implanted particles. The deep damage was found to extent to approximately 6× this depth after Cu implantation and to approximately 5× this depth after Ag implantation After annealing the range of the deep damage was found to shrink. All these observations are in accordance with the proposed model.
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