Year-end Sale % OFF 
Abstract
We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with other channel region resistance. As a result, the effective channel length is smaller than the physical length. The aforementioned definition of effective channel length in terms of device geometric parameters seems to be specific for ES a-IGZO TFTs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
