Abstract
Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. Ordering in Ga0.5In0.5P, which is lattice matched to GaAs, occurs on two out of four {111} planes, i.e., . The substrate orientation can affect the selection between the two ordered variants. Studies on atomic ordering in III-V alloys have been carried out during the past several years.Transmission electron microscopy (TEM) and selected-area diffraction have been used in this study to investigate the ordered domains in Ga0.5In0.5P layers. The samples were grown on misoriented (100) GaAs substrates, mostly 2° towards [001] unless otherwise specified, by metalorganic vapor phase epitaxy at 670°C with a growth rate ∼5 μm/hr. The layer thicknesses range from 1.5 to 12 μm. Plan-view specimens were prepared by chemical etching from the substrate sides and examined using a Philips CM30 microscope operated at 300 kV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
