Abstract
The redistribution of the p-type dopant Be during rapid thermal annealing after their growth of InGaAsP layers grown by gas-source molecular beam epitaxy has been studied using secondary ion mass spectrometry. The experimental structure consisted of a m Be-doped layer sandwiched between m undoped layers. A kick-out model of the substitutional-interstitial diffusion mechanism, which involves neutral interstitial Be species and positively charged group III self-interstitials, is proposed in order to explain the observed depth profiles. As a result of this work, we suggest a complete set of parameters which describes the diffusion of Be in quaternary epitaxial layers in the temperature range 700-C.
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