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Abstract
The diffusion of Be during post-growth rapid thermal annealing (RTA) in InGaAs layers grown by gas source molecular beam epitaxy (GSMBE) has been studied. The observed secondary ion mass spectrometry (SIMS) concentration distributions, obtained for annealing cycles with time durations of 10 s to 240 s and temperatures in the range for Be doping concentration of , could be explained by a kick-out mechanism considering neutral Be interstitials and singly positively charged group III self-interstitials. Be and Ga, In interstitial diffusivities, the equilibrium concentration of Ga and In interstitials, as a function of temperature, are obtained from this work.
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