Abstract
Ultraviolet-nanoimprint lithography (UV-NIL) is a promising cost-effective method for defining nanoscale structures at room temperature and low pressure. To apply a large-area stamp to a high throughput step-and-repeat process at atmospheric conditions, we proposed a new UV-NIL process that uses an elementwise patterned stamp (EPS), which consists of elements separated by channels, and additive gas pressurization. The proposed UV-NIL process required just four imprints to press an 8-in. wafer. EPS features measuring 50–80 nm were successfully transferred onto the wafers. The experiments demonstrated that a 5 × 5-in. 2 EPS could be used with a step-and-repeat UV-NIL process to imprint 8-in. wafers under atmospheric conditions.
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