Abstract
Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. To apply a large-area stamp to step-and-repeat UV-NIL in an atmospheric environment for high-throughput, we proposed a new step-and-repeat UV-NIL process using an elementwise patterned stamp (EPS), which consists of elements separated by channels. The proposed UV-NIL is able to imprint an 8-in. wafer with a 5 sq. in EPS in four times. 50 - 80 nm features of the EPS were successfully transferred over 8-in. wafers. The experiments demonstrated that a large-area EPS in the step-and-repeat UV-NIL can be used for imprinting 8-in. wafers in an atmospheric environment.
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