Abstract
Tremendous efforts have been made toward large-area Cu(In,Ga)Se2-based photovoltaic module fabrication with some successful commercialisation cases using a co-evaporation system. However, comprehensive implementation of the technology has been hindered due to the technological difficulties in film uniformity for scaled-up deposition. However, the quantitative impact analysis on these topics is a matter of commercial confidentiality, and it has not been possible to provide precise accounts of the processes currently used. In this technical report, an attempt has been made to statistically identify the quantitative impact of the uniformity of Cu(In,Ga)Se2 layer on the J-V characteristics of the large-area panels (120 cm × 60 cm) fabricated from a pilot in-line evaporation system. Given the assumption that reproducibility for the other process steps is high, the results deliver important grounds for setting the control limits of the compositional uniformity for quality assurance towards a highly efficient CIGS PV manufacturing line.
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