A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel

Abstract

We propose and theoretically analyze a metal-oxide-semiconductor field-effect-transistor type of spin transistor (spin MOSFET) employing a ferromagnetic semiconductor (FS) for the channel. A ferromagnetic Schottky junction between the FS channel and a ferromagnetic metal (FM) is used for the source and drain. The output characteristics of the spin MOSFET depend on the relative magnetization configuration of the FS channel and FM source/drain. A large magnetocurrent ratio can be obtained and it is insensitive to the drain-source bias conditions, owing to the spin-filter effect of the FS/FM Schottky junction. Furthermore, excellent transistor performance, such as high transconductance and small subthreshold swing, is predicted. A new nonvolatile memory architecture using a single spin MOSFET cell is also presented, in which the programming current can be drastically reduced using the electrical manipulation of magnetization reversal of the FS channel.