Abstract
This paper describes a new class of spin transistors referred to as spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The possible device structures, and theoretically predicted device performance are presented. The spin MOSFETs can not only exhibit significant magnetotransport effect such as large magnetocurrent, but also satisfy important requirements for integrated circuit applications such as high transconductance, low power-delay product, and low off-current. The additional spin-related degree of freedom in controlling output currents makes the spin MOSFETs attractive building blocks for a nonvolatile memory cell and reconfigurable logic gates on spin-electronic integrated circuits. The experimental demonstration of a spin MOSFET is also presented.
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