Abstract
Transconductance measurements are performed on advanced fully depleted SOI MOSFETs and reveal a new floating-body effect. Gate tunneling current is responsible for the body charging and may lead to the onset of a strong second peak in front-gate transconductance. This effect occurs at low drain voltage and can be modulated by the back gate bias. We have investigated the size and the temperature (down to 100 K) dependence of the peak magnitude. A qualitative analytical model describes the onset and experimental behavior of the second transconductance peak.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.