Abstract
A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source. At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 10-µs programming speed at a drain voltage of 5 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
