Hot carrier energy distributions in short channel MOSFETs and the persistence of substrate currents at low drain voltages

Abstract

Demonstrates a hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation and shows it can be used to explain the form of the hot carrier distribution in MOSFETs operating at low drain voltages. We also show that electron-electron interactions near the drain of a MOSFET can account for the persistence of substrate current in MOSFETs operating at low drain voltages and low temperatures.