Abstract
Demonstrates a hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation and shows it can be used to explain the form of the hot carrier distribution in MOSFETs operating at low drain voltages. We also show that electron-electron interactions near the drain of a MOSFET can account for the persistence of substrate current in MOSFETs operating at low drain voltages and low temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
