Abstract
The impact ionization phenomenon in 0.1 /spl mu/m MOSFET's at low temperature and low drain voltage is investigated by measuring the substrate current and the kink current. It is observed that the substrate current and hence the impact ionization probability decrease as the temperature is decreased. The decrease of the substrate current with decreasing the temperature is more pronounced in such a small sized device which is operated at low drain voltage. The kink effect appears even in the bulk devices at low temperature. The kink effect becomes more serious as the temperature is lowered although the substrate current decreases with decreasing the temperature. The mechanism for such behavior of the substrate current and the kink current at low temperature is discussed from the viewpoints of hot carrier energy, impact ionization threshold energy and the forward-biasing effect of the source junction at low temperature. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
