A single chip electron spin resonance detector based on a single high electron mobility transistor

Abstract

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magnetic field (0.1–0.7 mT) and large power consumption (0.5–200 mW), severely limiting their use for the investigation of samples having long relaxation times and for operation at low temperatures. Here we report on the design and characterization of a single-chip ESR detector operating with a microwave magnetic field and a power consumption orders of magnitude lower compared with previous designs. These significant improvements are mainly due to the use of a high electron mobility transistor (HEMT) technology instead of a complementary metal-oxide semiconductor (CMOS) technology. The realized single-chip ESR detector, which operates at 11.2 GHz, consists of an LC Colpitts oscillator realized with a single high-electron mobility transistor and a co-integrated single turn planar coil having a diameter of 440 μm. The realized detector operates from 300 K down to 1.4 K, at least. Its minimum microwave magnetic field is 0.4 μT at 300 K and 0.06 μT at 1.4 K, whereas its power consumption is 90 μW at 300 K and 4 μW at 1.4 K, respectively. The experimental spin sensitivity on a sensitive volume of about 30 nL, as measured with a single crystal of α,γ-bisdiphenylene-β-phenylallyl (BDPA)/benzene complex, is of 8 × 1010 spins/Hz1/2 at 300 K and 2 × 109 spins/Hz1/2 at 10 K, respectively. In a volume of about 100 pL, located in proximity to the coil wire, the spin sensitivity improves by two orders of magnitude.