Abstract
A circuit simulation model for Schottky-barrier diodes is presented which accurately reproduces the diode's forward I-V characteristics. This is achieved by the inclusion of the nonlinear (current-dependent) series resistance typically observed in planar Schottky-barrier diodes. The diode model is targeted for large-signal transient and dc bias analysis where precise solutions are required. Noteworthy features of the model are (a) an easily determined parameter set from either direct measurements or geometrical and process data, (b) requires only one additional node over the constant-resistance diode models, and (c) is applicable to a wide variety of diode geometries. Finally, an example is given to demonstrate the accuracy of the diode model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.